Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Ho, Yen-Teng | en_US |
dc.contributor.author | Liang, Mei-Hui | en_US |
dc.contributor.author | Hsiao, Feng-Ke | en_US |
dc.contributor.author | Wang, Wei-Lin | en_US |
dc.contributor.author | Peng, Chun-Yen | en_US |
dc.contributor.author | Chen, Wei-Da | en_US |
dc.contributor.author | Lee, Wei-I | en_US |
dc.contributor.author | Chang, Li | en_US |
dc.date.accessioned | 2014-12-08T15:43:56Z | - |
dc.date.available | 2014-12-08T15:43:56Z | - |
dc.date.issued | 2008-04-01 | en_US |
dc.identifier.issn | 0022-0248 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1016/j.jcrysgro.2007.11.047 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/29709 | - |
dc.description.abstract | Non-polar (1 1 (2) over bar 0) GaN has been successfully grown on (0 0 1) LaAlO3 (LAO) substrate by pulsed laser deposition method. The nitrogen plasma is essential to grow pure a-plane GaN films. The insertion of a ZnO buffer layer improves the quality of GaN thin film as shown by X-ray diffraction. Reflection high energy electron diffraction and cross-sectional transmission electron microscopy with selected area diffraction reveal two types of a-plane GaN domains perpendicular to each other in orientation relationships of [0 0 0 1](GaN)parallel to[1 (1) over bar 0](LAO) and [1 (1) over bar 0 0](GaN)parallel to[1 (1) over bar 0](LAO). (C) 2007 Elsevier B.V. All rights reserved. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | X-ray diffraction | en_US |
dc.subject | laser epitaxy | en_US |
dc.subject | nitride | en_US |
dc.title | Non-polar a-plane GaN grown on LaAlO3 (001) substrate by pulsed laser deposition | en_US |
dc.type | Article; Proceedings Paper | en_US |
dc.identifier.doi | 10.1016/j.jcrysgro.2007.11.047 | en_US |
dc.identifier.journal | JOURNAL OF CRYSTAL GROWTH | en_US |
dc.citation.volume | 310 | en_US |
dc.citation.issue | 7-9 | en_US |
dc.citation.spage | 1614 | en_US |
dc.citation.epage | 1618 | en_US |
dc.contributor.department | 材料科學與工程學系 | zh_TW |
dc.contributor.department | 電子物理學系 | zh_TW |
dc.contributor.department | Department of Materials Science and Engineering | en_US |
dc.contributor.department | Department of Electrophysics | en_US |
dc.identifier.wosnumber | WOS:000255843200056 | - |
Appears in Collections: | Conferences Paper |
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