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dc.contributor.authorCHANG, KMen_US
dc.contributor.authorTSAI, JYen_US
dc.contributor.authorCHANG, CYen_US
dc.date.accessioned2014-12-08T15:04:28Z-
dc.date.available2014-12-08T15:04:28Z-
dc.date.issued1993-07-01en_US
dc.identifier.issn0741-3106en_US
dc.identifier.urihttp://dx.doi.org/10.1109/55.225566en_US
dc.identifier.urihttp://hdl.handle.net/11536/2971-
dc.description.abstractThe thermionic emission current for electrons across the heterointerface is classically modeled as the difference between two opposing electron fluxes. Here we have developed a new consistent physical model, which includes the carrier degeneracy and nonideal behavior effects, for thermionic emission current at the heterojunction interface. It is shown that the thermionic emission current at the heterojunction interface can be expressed in a simple closed-form formalism which gives the relations among the average directional thermal velocity of electrons, the conduction band discontinuity, and the carrier activities at both sides of the interface. We also discuss the conditions under which the thermionic emission occurs at the heterointerface.en_US
dc.language.isoen_USen_US
dc.titleNEW PHYSICAL FORMULATION OF THE THERMIONIC EMISSION CURRENT AT THE HETEROJUNCTION INTERFACEen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/55.225566en_US
dc.identifier.journalIEEE ELECTRON DEVICE LETTERSen_US
dc.citation.volume14en_US
dc.citation.issue7en_US
dc.citation.spage338en_US
dc.citation.epage341en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:A1993LL51100008-
dc.citation.woscount5-
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