標題: 2-COLOR INFRARED PHOTODETECTOR USING GAAS/ALGAAS AND STRAINED INGAAS/ALGAAS MULTIQUANTUM WELLS
作者: TSAI, KL
CHANG, KH
LEE, CP
HUANG, KF
TSANG, JS
CHEN, HR
電子物理學系
電子工程學系及電子研究所
Department of Electrophysics
Department of Electronics Engineering and Institute of Electronics
公開日期: 28-Jun-1993
摘要: A two-color infrared detector using GaAs/A]GaAs and strained InGaAs/AlGaAs multiquantum wells is demonstrated. The response peak of the GaAs/AlGaAs quantum well is at 8 mum, and that of the InGaAs/AlGaAs quantum well is at 5.3 mum. The responsivity of the detector is 1 A/W at 8 mum and 0.27 A/W at 5.3 mum; these are the best values reported for a two-color quantum well infrared detectors (QWIPs) with peak sensitivities in the spectral regions of 3-5.3 mum and 7.5-14 mum. Single-colored 5.3 and 8 mum QWIPs were also fabricated to study the bias dependent behavior. This behavior can be explained using the concept of current continuity. Because of a higher electrical resistance, a high electric field domain is always formed first in the shorter wavelength quantum well stack.
URI: http://dx.doi.org/10.1063/1.109009
http://hdl.handle.net/11536/2973
ISSN: 0003-6951
DOI: 10.1063/1.109009
期刊: APPLIED PHYSICS LETTERS
Volume: 62
Issue: 26
起始頁: 3504
結束頁: 3506
Appears in Collections:Articles