Comparison of ultrathin CoTiO3 and NiTiO3 high-k gate dielectrics

doi:10.1063/1.1347405

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DC 欄位	值	語言
dc.contributor.author	Pan, TM	en_US
dc.contributor.author	Lei, TF	en_US
dc.contributor.author	Chao, TS	en_US
dc.date.accessioned	2014-12-08T15:44:02Z	-
dc.date.available	2014-12-08T15:44:02Z	-
dc.date.issued	2001-03-15	en_US
dc.identifier.issn	0021-8979	en_US
dc.identifier.uri	http://dx.doi.org/10.1063/1.1347405	en_US
dc.identifier.uri	http://hdl.handle.net/11536/29764	-
dc.description.abstract	High-k cobalt-titanium oxide (CoTiO3) and nickel-titanium oxide (NiTiO3) were formed by directly oxidizing sputtered Co/Ti and Ni/Ti film. Al/CoTiO3/Si3N4/Si and Al/NiTiO3/Si3N4/Si capacitor structures were fabricated and measured. The effective dielectric constant (k value congruent to 45) with buffer layer for CoTiO3 is larger than that of NiTiO3. In addition, CoTiO3 depicts excellent electrical properties at the same time. This metal oxide thus appears to be a very promising high-k gate dielectric for future ultralarge scale integrated devices. (C) 2001 American Institute of Physics.	en_US
dc.language.iso	en_US	en_US
dc.title	Comparison of ultrathin CoTiO3 and NiTiO3 high-k gate dielectrics	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1063/1.1347405	en_US
dc.identifier.journal	JOURNAL OF APPLIED PHYSICS	en_US
dc.citation.volume	89	en_US
dc.citation.issue	6	en_US
dc.citation.spage	3447	en_US
dc.citation.epage	3452	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:000167248100059	-
dc.citation.woscount	17	-
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