High-k cobalt-titanium oxide dielectrics formed by oxidation of sputtered Co/Ti or Ti/Co films

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DC 欄位	值	語言
dc.contributor.author	Pan, TM	en_US
dc.contributor.author	Lei, TF	en_US
dc.contributor.author	Chao, TS	en_US
dc.date.accessioned	2014-12-08T15:44:05Z	-
dc.date.available	2014-12-08T15:44:05Z	-
dc.date.issued	2001-03-05	en_US
dc.identifier.issn	0003-6951	en_US
dc.identifier.uri	http://dx.doi.org/10.1063/1.1352044	en_US
dc.identifier.uri	http://hdl.handle.net/11536/29779	-
dc.description.abstract	High-k cobalt-titanium oxide (CoTiO3) film was formed by directly oxidizing sputtered Co/Ti or Ti/Co films. Al/CoTiO3/Si3N4/Si capacitor structures were fabricated and measured. Excellent electrical properties with an effective dielectric constant (i.e., k value) as high as 40 have been achieved for a CoTiO3 gate dielectric with a buffer layer. The metal-oxide thus appears to be a very promising high-k gate dielectric for future ultralarge scale integrated devices. (C) 2001 American Institute of Physics.	en_US
dc.language.iso	en_US	en_US
dc.title	High-k cobalt-titanium oxide dielectrics formed by oxidation of sputtered Co/Ti or Ti/Co films	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1063/1.1352044	en_US
dc.identifier.journal	APPLIED PHYSICS LETTERS	en_US
dc.citation.volume	78	en_US
dc.citation.issue	10	en_US
dc.citation.spage	1439	en_US
dc.citation.epage	1441	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:000167151300041	-
dc.citation.woscount	9	-
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