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dc.contributor.authorCHAO, TSen_US
dc.contributor.authorLEE, CLen_US
dc.contributor.authorLEI, TFen_US
dc.date.accessioned2014-12-08T15:04:29Z-
dc.date.available2014-12-08T15:04:29Z-
dc.date.issued1993-06-24en_US
dc.identifier.issn0013-5194en_US
dc.identifier.urihttp://hdl.handle.net/11536/2977-
dc.description.abstractAn ellipsometry measurement method is proposed to measure the poly-Si/poly-oxide/poly-Si/SiO2/Si structure. The thickness of each layer in this structure can be easily obtained by a conventional ellipsometry measurement. The measured result is consistent with that of cross-sectional TEM.en_US
dc.language.isoen_USen_US
dc.subjectMEASUREMENTen_US
dc.subjectTHIN FILMSen_US
dc.subjectELLIPSOMETRYen_US
dc.titleTHICKNESS DETERMINATION OF POLY-SI/POLY-OXIDE POLY-SI/SIO2/SI STRUCTURE BY ELLIPSOMETERen_US
dc.typeArticleen_US
dc.identifier.journalELECTRONICS LETTERSen_US
dc.citation.volume29en_US
dc.citation.issue13en_US
dc.citation.spage1157en_US
dc.citation.epage1159en_US
dc.contributor.department電控工程研究所zh_TW
dc.contributor.departmentInstitute of Electrical and Control Engineeringen_US
dc.identifier.wosnumberWOS:A1993LW31600007-
dc.citation.woscount0-
Appears in Collections:Articles


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