THICKNESS DETERMINATION OF POLY-SI/POLY-OXIDE POLY-SI/SIO2/SI STRUCTURE BY ELLIPSOMETER

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DC 欄位	值	語言
dc.contributor.author	CHAO, TS	en_US
dc.contributor.author	LEE, CL	en_US
dc.contributor.author	LEI, TF	en_US
dc.date.accessioned	2014-12-08T15:04:29Z	-
dc.date.available	2014-12-08T15:04:29Z	-
dc.date.issued	1993-06-24	en_US
dc.identifier.issn	0013-5194	en_US
dc.identifier.uri	http://hdl.handle.net/11536/2977	-
dc.description.abstract	An ellipsometry measurement method is proposed to measure the poly-Si/poly-oxide/poly-Si/SiO2/Si structure. The thickness of each layer in this structure can be easily obtained by a conventional ellipsometry measurement. The measured result is consistent with that of cross-sectional TEM.	en_US
dc.language.iso	en_US	en_US
dc.subject	MEASUREMENT	en_US
dc.subject	THIN FILMS	en_US
dc.subject	ELLIPSOMETRY	en_US
dc.title	THICKNESS DETERMINATION OF POLY-SI/POLY-OXIDE POLY-SI/SIO2/SI STRUCTURE BY ELLIPSOMETER	en_US
dc.type	Article	en_US
dc.identifier.journal	ELECTRONICS LETTERS	en_US
dc.citation.volume	29	en_US
dc.citation.issue	13	en_US
dc.citation.spage	1157	en_US
dc.citation.epage	1159	en_US
dc.contributor.department	電控工程研究所	zh_TW
dc.contributor.department	Institute of Electrical and Control Engineering	en_US
dc.identifier.wosnumber	WOS:A1993LW31600007	-
dc.citation.woscount	0	-
顯示於類別：	期刊論文

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