標題: | Characterization of p-type InxGa1-xN grown by metalorganic chemical vapor deposition |
作者: | Wen, TC Lee, WI Sheu, JK Chi, GC 友訊交大聯合研發中心 D Link NCTU Joint Res Ctr |
關鍵字: | Mg-doped InxGa1-xN;wall measurement;carrier concentration;mobility;in mole fraction;photoluminescence |
公開日期: | 1-三月-2001 |
摘要: | This study investigates the electrical and optical characteristics of Mg-doped InxGa1-xN grown by metalorganic chemical vapor deposition. All the Mg-doped InxGa1-xN layers show p-type conduction after thermal annealing. Room temperature (RT) carrier concentration increases exponentially with an In mole fraction increase. The highest hole concentration of bull; Mg-doped InxGa1-xN is 1.65 x 10(19) cm(-3). Also, the RT photoluminescence (PL) spectra of Mg related emissions in InxGa1-xN are displayed. However, the PL peak intensity becomes weak after the post-annealing process on Mg-doped InxGa1-xN. This degradation might be created by the surface dissociation during the post-annealing process. (C) 2001 Elsevier Science Ltd. All rights reserved. |
URI: | http://dx.doi.org/10.1016/S0038-1101(01)00044-2 http://hdl.handle.net/11536/29794 |
ISSN: | 0038-1101 |
DOI: | 10.1016/S0038-1101(01)00044-2 |
期刊: | SOLID-STATE ELECTRONICS |
Volume: | 45 |
Issue: | 3 |
起始頁: | 427 |
結束頁: | 430 |
顯示於類別: | 期刊論文 |