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dc.contributor.authorChen, JFen_US
dc.contributor.authorChen, NCen_US
dc.contributor.authorWang, JSen_US
dc.contributor.authorChen, YFen_US
dc.date.accessioned2014-12-08T15:44:13Z-
dc.date.available2014-12-08T15:44:13Z-
dc.date.issued2001-02-01en_US
dc.identifier.issn0018-9383en_US
dc.identifier.urihttp://dx.doi.org/10.1109/16.902717en_US
dc.identifier.urihttp://hdl.handle.net/11536/29863-
dc.description.abstractThe use of a differential capacitance technique for characterizing the relaxation-induced defect states in Schottky diodes has been studied, Based on a proposed equivalent circuit including the effect of potential drop across the carrier-depletion layer, a simple equation of capacitance at different voltages and frequencies is derived and compared with experimental data obtained from relaxed In0.2Ga0.8As/GaAs samples, It is shown that the carrier-depletion layer will introduce capacitance dispersion over frequency like traps; from it the device's geometric parameters, the resistance of the carrier-depletion lager and the ionization energy of the deep level that gives rise to this resistance can be obtained. The relation between the low-frequency capacitance and reverse voltage can be well explained by the depletion of the free carriers between the Schottky depletion and the carrier-depletion layer The relaxation-induced traps are believed to be at 0.535 and 0.36 eV, respectively, in the GaAs and In0.2Ga0.8As regions.en_US
dc.language.isoen_USen_US
dc.subjectcapacitance spectroscopyen_US
dc.subjectdeep trapsen_US
dc.subjectInGaAs/GaAsen_US
dc.subjectSchottky diodesen_US
dc.titleDifferential capacitance measurements of relaxation-induced defects in InGaAs/GaAs Schottky diodesen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/16.902717en_US
dc.identifier.journalIEEE TRANSACTIONS ON ELECTRON DEVICESen_US
dc.citation.volume48en_US
dc.citation.issue2en_US
dc.citation.spage204en_US
dc.citation.epage209en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000167017400004-
dc.citation.woscount6-
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