標題: 1.55-mu m and infrared-band photoresponsivity of a Schottky barrier porous silicon photodetector
作者: Lee, MK
Chu, CH
Wang, YH
Sze, SM
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-Feb-2001
摘要: We have investigated the spectral responsivity of porous silicon Schottky barrier photodetectors in the wavelength range 0.4-1.7 mum The photodetectors show strong photoresponsivity in both the visible and the infrared bands, especially at 1.55 mum. The photocurrent can reach 1.8 mA at a reverse bias of 6 V under illumination by a 1.55-mum, 10-mW laser diode. The corresponding quantum efficiency is 14.4%. (C) 2001 Optical Society of America.
URI: http://hdl.handle.net/11536/29881
ISSN: 0146-9592
期刊: OPTICS LETTERS
Volume: 26
Issue: 3
起始頁: 160
結束頁: 162
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