標題: High-performance solid-phase crystallized polycrystalline silicon thin-film transistors with floating-channel structure
作者: Chang, Chia-Wen
Deng, Chih-Kang
Chang, Che-Lun
Liao, Ta-Chuan
Lei, Tan-Fu
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: floating-channel structure;surface nucleation;solid-phase crystallization (SPC);thin-film transistor (TFT)
公開日期: 1-Apr-2008
摘要: High-performance solid-phase crystallized polycrystalline silicon thin-film transistors with a floating-channel active region (FC poly-Si TFTs) are proposed in this study. A high-quality poly-Si channel film accompanied by a larger grain size and fewer microstructural defects could be obtained. Compared with the conventional poly-Si TFTs (CN poly-Si TFTs), the fabricated FC poly-Si TFTs exhibit superior electrical characteristics, including lower threshold voltage, higher field-effect mobility, and lower trap state density. These electrical performance improvements could be attributed to the fact that the a-Si film with a floating-channel structure can relieve the stress generated from the crystallization process accompanying the trap state density reduction and grain size enhancement. In addition, the FC poly-Si TFTs also exhibit improved hot-carrier stress immunity due to the reduced weak Si-H bonds from fewer grain boundaries in the poly-Si channel. Therefore, the proposed FC poly-Si TFTs can be easily fabricated by conventional solid-phase crystallization, and suitable for future high-performance flat-panel display applications.
URI: http://dx.doi.org/10.1143/JJAP.47.3024
http://hdl.handle.net/11536/29954
ISSN: 0021-4922
DOI: 10.1143/JJAP.47.3024
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS
Volume: 47
Issue: 4
起始頁: 3024
結束頁: 3027
Appears in Collections:Conferences Paper


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