完整後設資料紀錄
DC 欄位 | 值 | 語言 |
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dc.contributor.author | Ma, Ming-Wen | en_US |
dc.contributor.author | Chen, Chih-Yang | en_US |
dc.contributor.author | Su, Chun-Jung | en_US |
dc.contributor.author | Wu, Woei-Cherng | en_US |
dc.contributor.author | Yang, Tsung-Yu | en_US |
dc.contributor.author | Kao, Kuo-Hsing | en_US |
dc.contributor.author | Chao, Tien-Sheng | en_US |
dc.contributor.author | Lei, Tan-Fu | en_US |
dc.date.accessioned | 2014-12-08T15:44:27Z | - |
dc.date.available | 2014-12-08T15:44:27Z | - |
dc.date.issued | 2008-03-01 | en_US |
dc.identifier.issn | 0038-1101 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1016/j.sse.2007.07.018 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/30031 | - |
dc.description.abstract | In this paper, we demonstrate the low-temperature polycrystalline silicon thin-film transistors (LTPS-TFTs) with TaN metal-gate and HfO2 gate dielectric to achieve high performance characteristics. A high performance LTPS-TFT with low threshold voltage 0.9 V, excellent subthreshold swing 0.15 V/decade and high I-on/I-min current ratio 1.9 x 10(6) are derived without any hydrogen treatment. In addition, we also introduce the fluorine implantation prior to the Si thin-film crystallization to passivate the defects in grain-boundaries of the channel film and HfO2/polysilicon interface. Significant improvements on subthreshold swing and I-min are observed. In addition, the transconductance degradation and threshold voltage instability due to hot carrier stress is also investigated, respectively. Finally, we derive a high reliability and performance LTPS-TFT with low threshold voltage similar to 1.38 V, ultra-low subthreshold swing 0.132 V/decade and high I-on/I-min current ratio 1.21 x 10(7), which is suitable for the application of system-on panel (SOP). (c) 2007 Elsevier Ltd. All rights reserved. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | LTPS-TFTs | en_US |
dc.subject | metal-gate | en_US |
dc.subject | high-kappa | en_US |
dc.subject | fluorine implantation | en_US |
dc.title | Improvement on performance and reliability of TaN/HfO2 LTPS-TFTs with fluorine implantation | en_US |
dc.type | Article; Proceedings Paper | en_US |
dc.identifier.doi | 10.1016/j.sse.2007.07.018 | en_US |
dc.identifier.journal | SOLID-STATE ELECTRONICS | en_US |
dc.citation.volume | 52 | en_US |
dc.citation.issue | 3 | en_US |
dc.citation.spage | 342 | en_US |
dc.citation.epage | 347 | en_US |
dc.contributor.department | 電子物理學系 | zh_TW |
dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
dc.contributor.department | Department of Electrophysics | en_US |
dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
dc.identifier.wosnumber | WOS:000255529100002 | - |
顯示於類別: | 會議論文 |