Type-I/type-II exciton in strained Si/SiGe multi-QWs

標題:	Type-I/type-II exciton in strained Si/SiGe multi-QWs
作者:	Wang, K. Y. Huang, W. P. Lin, T. C. Lee, C. P. Sung, Y. T. Nicholas, R. J. Cheng, H. H. 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics
關鍵字:	Si/Ge heterostructure;magneto-luminescence;band alignment
公開日期:	1-Mar-2008
摘要:	Using magneto-luminescence (ML) measurement, we have observed the formation of magneto-excitons with either type-I or type-II band alignment depending on the strain distribution in the Si/SiGe quantum well structures. This observation is consistent with the analysis of strain-induced band shifting and exciton-transition energy. (c) 2007 Elsevier B.V. All rights reserved.
URI:	http://dx.doi.org/10.1016/j.physe.2007.09.163 http://hdl.handle.net/11536/30065
ISSN:	1386-9477
DOI:	10.1016/j.physe.2007.09.163
期刊:	PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES
Volume:	40
Issue:	5
起始頁:	1430
結束頁:	1433
Appears in Collections:	Conferences Paper

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