OBSERVATION OF QUANTUM CONFINEMENT EFFECTS IN STRAINED SI0.84GE0.16/SI QUANTUM-WELLS AT ROOM-TEMPERATURE

doi:10.1063/1.109241

標題:	OBSERVATION OF QUANTUM CONFINEMENT EFFECTS IN STRAINED SI0.84GE0.16/SI QUANTUM-WELLS AT ROOM-TEMPERATURE
作者:	CHEN, YF DAI, YT CHOU, HP CHANG, DC CHANG, CY WANG, PJ 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics
公開日期:	24-五月-1993
摘要:	We report the first study of quantum confinement shifts of energy gap in strained Si0.84Ge0.16/Si quantum wells at room temperature by photothermal deflection spectroscopy (PDS) technique. The experimental results obtained from the amplitude and phase of the PDS signal are in good agreement with quantum well subband calculation.
URI:	http://dx.doi.org/10.1063/1.109241 http://hdl.handle.net/11536/3012
ISSN:	0003-6951
DOI:	10.1063/1.109241
期刊:	APPLIED PHYSICS LETTERS
Volume:	62
Issue:	21
起始頁:	2713
結束頁:	2715
顯示於類別：	期刊論文