標題: A novel process for forming an ultra-thin oxynitride film with high nitrogen topping
作者: Lai, Chiung Hui
Lin, Bo Chun
Chang, Kow Ming
Hsieh, Kuang Yeu
Lai, Yi Lung
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-Feb-2008
摘要: We have proposed an approach to grow ultra-thin oxynitride film with high nitrogen concentration (approximate to 13 at%) on the top and low interface state density (D-it = 2 x 10(10) cm(-2) eV(-1)). In general, a high-nitrogen oxynitride film provides a rather reliable and higher dielectric constant. In this method, oxynitride growth included three process stages-chemical oxide growth, nitridation and subsequent dry oxidation. By this technique, the films demonstrate the desirable nitrogen concentration profile and excellent properties in terms of low Dit, low leakage current, and high endurance in stressing. Better controllability in film thickness may be achieved because the oxidation rate of the nitride-chemical oxide is much smaller than that of the conventional oxide. Most importantly, this process is simple and fully compatible with current process technology. (C) 2007 Published by Elsevier Ltd.
URI: http://dx.doi.org/10.1016/j.jpcs.2007.07.107
http://hdl.handle.net/11536/30187
ISSN: 0022-3697
DOI: 10.1016/j.jpcs.2007.07.107
期刊: JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS
Volume: 69
Issue: 2-3
起始頁: 456
結束頁: 460
Appears in Collections:Conferences Paper


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