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dc.contributor.authorYeh, CFen_US
dc.contributor.authorLee, YCen_US
dc.contributor.authorLee, SCen_US
dc.date.accessioned2014-12-08T15:44:44Z-
dc.date.available2014-12-08T15:44:44Z-
dc.date.issued2000-11-01en_US
dc.identifier.issn0013-4651en_US
dc.identifier.urihttp://dx.doi.org/10.1149/1.1394051en_US
dc.identifier.urihttp://hdl.handle.net/11536/30193-
dc.description.abstractFluorinated silicon oxide film prepared by using temperature difference-based liquid phase deposition is very potential for use as an intermetal dielectric owing to its high fluorine concentration (8.6 atom %), low dielectric constant (3.46), low stress (41 MPa) low leakage current density (4.6 X 10(-9) A/cm(2) at 2 MV/cm), and low deposition temperature (room temperature). In this work, we closely examine reliability issues including resistance to water absorption and thermal stability by adopting the repeatedly annealing (400 degreesC) and boiling test. After the test, the net increase in the dielectric constant is only 0.02; the stress changes within -24 to 41 MPa with a resultant zero stress; the leakage current density increases slightly to 8.0 X 10(-9) A/cm(2). Obviously the film will preserve its attractive properties in a back-end process similar to the test. Accompanied with the investigation of p-etch rate, thermal desorption spectroscopy, and Fourier transform infrared spectroscopy, a feasible mechanism that accounts for the variation of the properties during the test is proposed. A high temperature (>400 degreesC) annealing effect is also studied. The film is thermally stable up to 600 degreesC, which is limited by the decomposition of Si-F bonds. The thermal stability of 600 degreesC is obviously sufficient for intermetal dielectric application. (C) 2000 The Electrochemical Society. S0013-4651(99)12-019-6. All rights reserved.en_US
dc.language.isoen_USen_US
dc.titleReliability of fluorinated silicon oxide film prepared by temperature difference-based liquid phase depositionen_US
dc.typeArticleen_US
dc.identifier.doi10.1149/1.1394051en_US
dc.identifier.journalJOURNAL OF THE ELECTROCHEMICAL SOCIETYen_US
dc.citation.volume147en_US
dc.citation.issue11en_US
dc.citation.spage4268en_US
dc.citation.epage4272en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000090053700046-
dc.citation.woscount4-
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