完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Lan, Wen-How | en_US |
dc.contributor.author | Huang, Kuo-Chin | en_US |
dc.contributor.author | Huang, Kai Feng | en_US |
dc.contributor.author | Lin, Jia-Ching | en_US |
dc.contributor.author | Cheng, Yi-Cheng | en_US |
dc.contributor.author | Lin, Wen-Jen | en_US |
dc.date.accessioned | 2014-12-08T15:44:46Z | - |
dc.date.available | 2014-12-08T15:44:46Z | - |
dc.date.issued | 2008-02-01 | en_US |
dc.identifier.issn | 0022-3697 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1016/j.jpcs.2007.07.068 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/30220 | - |
dc.description.abstract | The Al0.11Ga0.89N-based photodiodes fabricated under different annealing ambient after inductively Coupled plasma reactive ion etching process were studied. The dark current and photocurrent with different illuminated wavelengths were characterized. Higher photocurrent for the diode annealing in H-2 ambient can be observed and attributed to the defect-assisted photocurrent. This photocurrent shows a strong annealing ambient dependence and causes the shift of cutoff wavelength in the responsivity spectrum. The Surface state was characterized by the capacitance analysis with Schottky contact. (C) 2007 Elsevier Ltd. All rights reserved. | en_US |
dc.language.iso | en_US | en_US |
dc.title | Annealing of defect states in reactive ion etched GaN | en_US |
dc.type | Article; Proceedings Paper | en_US |
dc.identifier.doi | 10.1016/j.jpcs.2007.07.068 | en_US |
dc.identifier.journal | JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS | en_US |
dc.citation.volume | 69 | en_US |
dc.citation.issue | 2-3 | en_US |
dc.citation.spage | 719 | en_US |
dc.citation.epage | 723 | en_US |
dc.contributor.department | 電子物理學系 | zh_TW |
dc.contributor.department | Department of Electrophysics | en_US |
dc.identifier.wosnumber | WOS:000253874700099 | - |
顯示於類別: | 會議論文 |