標題: | Plasma treatment effects on hydrogenated amorphous carbon films prepared by plasma-enhanced chemical vapor deposition |
作者: | Wu, Jun Wang, Ying-Lang Kuo, Cheng-Tzu 材料科學與工程學系 Department of Materials Science and Engineering |
關鍵字: | amorphous materials;semiconductors;thin films;plasma deposition |
公開日期: | 1-二月-2008 |
摘要: | When hydrogenated amorphous carbon (a-C:H) films are deposited by a radio frequency (RF; 13.56MHz) glow discharge system, their properties can be significantly affected by RF power input at deposition. Furthermore, the hydrogen content in the a-C:H films will be decreased in the postdeposition plasma treatment. This study investigated the effects of plasma input at deposition and postdeposition plasma treatment on the resulting film properties of a-C:H films. Atomic force microscopy (AFM) was employed to detect the surface roughness of the plasma-enhanced chemical vapor deposition (PECVD) a-C:H films. Raman spectroscopy was employed to determine the hydrogen concentration as well as the tetrahedral and trigonal bondings associated with C-H bond. The Raman analysis results Suggested the occurrence of a higher degree of structural order in the sp(2) lattice of the well plasma-treated a-C:H films. (c) 2007 Elsevier Ltd. All rights reserved. |
URI: | http://dx.doi.org/10.1016/j.jpcs.2007.07.126 http://hdl.handle.net/11536/30231 |
ISSN: | 0022-3697 |
DOI: | 10.1016/j.jpcs.2007.07.126 |
期刊: | JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS |
Volume: | 69 |
Issue: | 2-3 |
起始頁: | 505 |
結束頁: | 508 |
顯示於類別: | 會議論文 |