標題: Plasma treatment effects on hydrogenated amorphous carbon films prepared by plasma-enhanced chemical vapor deposition
作者: Wu, Jun
Wang, Ying-Lang
Kuo, Cheng-Tzu
材料科學與工程學系
Department of Materials Science and Engineering
關鍵字: amorphous materials;semiconductors;thin films;plasma deposition
公開日期: 1-Feb-2008
摘要: When hydrogenated amorphous carbon (a-C:H) films are deposited by a radio frequency (RF; 13.56MHz) glow discharge system, their properties can be significantly affected by RF power input at deposition. Furthermore, the hydrogen content in the a-C:H films will be decreased in the postdeposition plasma treatment. This study investigated the effects of plasma input at deposition and postdeposition plasma treatment on the resulting film properties of a-C:H films. Atomic force microscopy (AFM) was employed to detect the surface roughness of the plasma-enhanced chemical vapor deposition (PECVD) a-C:H films. Raman spectroscopy was employed to determine the hydrogen concentration as well as the tetrahedral and trigonal bondings associated with C-H bond. The Raman analysis results Suggested the occurrence of a higher degree of structural order in the sp(2) lattice of the well plasma-treated a-C:H films. (c) 2007 Elsevier Ltd. All rights reserved.
URI: http://dx.doi.org/10.1016/j.jpcs.2007.07.126
http://hdl.handle.net/11536/30231
ISSN: 0022-3697
DOI: 10.1016/j.jpcs.2007.07.126
期刊: JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS
Volume: 69
Issue: 2-3
起始頁: 505
結束頁: 508
Appears in Collections:Conferences Paper


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