完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Lin, S | en_US |
dc.contributor.author | Chu, HS | en_US |
dc.date.accessioned | 2014-12-08T15:44:47Z | - |
dc.date.available | 2014-12-08T15:44:47Z | - |
dc.date.issued | 2000-10-01 | en_US |
dc.identifier.issn | 1089-3954 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/30235 | - |
dc.description.abstract | This article presents a systematic inverse modeling analysis for estimating the incident heat flux required to achieve temperature uniformity across a circular disk during thermal processing. A one-dimensional thermal model, temperature-dependent thermal properties of silicon, and a future-time algorithm of inverse heat transfer method are used. Vertical and lateral edge-heat compensations on the perimeter are discussed. The required edge-heat compensations for maintaining uniform temperature across 100-mm-diameter (0.6-min-thick), 150-mm-diameter (0.675-mm-thick), 200-mm-diameter (0.725-mm-thick), and 300-mm-diameter (0.775-mm-thick) silicon disks are evaluated intuitively using inverse modeling. Our numerical results show that temperature uniformity can be efficiently achieved using inverse modeling. The resulting maximum temperature differences in our present study were only 0.279, 0.583, 0.989, and 0.178 degreesC across 100-, 150-, 200- and 300-mm-diameter disks, respectively. | en_US |
dc.language.iso | en_US | en_US |
dc.title | Using inverse modeling to estimate the incident heat flux required to achieve temperature uniformity across a circular disk | en_US |
dc.type | Article | en_US |
dc.identifier.journal | MICROSCALE THERMOPHYSICAL ENGINEERING | en_US |
dc.citation.volume | 4 | en_US |
dc.citation.issue | 4 | en_US |
dc.citation.spage | 245 | en_US |
dc.citation.epage | 260 | en_US |
dc.contributor.department | 機械工程學系 | zh_TW |
dc.contributor.department | Department of Mechanical Engineering | en_US |
dc.identifier.wosnumber | WOS:000165677700004 | - |
dc.citation.woscount | 2 | - |
顯示於類別: | 期刊論文 |