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dc.contributor.authorHo, Chia-Chengen_US
dc.contributor.authorChiou, Bi-Shiouen_US
dc.date.accessioned2014-12-08T15:44:55Z-
dc.date.available2014-12-08T15:44:55Z-
dc.date.issued2008-01-01en_US
dc.identifier.issn0167-9317en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.mee.2007.04.151en_US
dc.identifier.urihttp://hdl.handle.net/11536/30320-
dc.description.abstractThe dielectric breakdown field is one of the important concerns for device reliability. The breakdown of dielectric is originated at a fatal flaw that grows to cause failure and can be explained by the weakest-link theory. In this study, metal-insulator-metal (MIM) capacitors with plasma enhanced chemical vapor deposited (PECVD) SiNx are prepared. Ammonia (NH3) plasmas are applied after the deposition of the dielectric SiNx. The Weibull distribution function, which is based on the weakest-link theory, is employed to analyze the effect of the electrode area as well as the plasma treatment on the breakdown of the MIM capacitors. The time dependent dielectric breakdown testing indicates a decrease in both the leakage current and the lifetime of the MIM capacitors treated with plasma. Possible dielectric degradation mechanisms are explored. (C) 2007 Elsevier B.V. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectWeibull distributionen_US
dc.subjectweakest-link theoryen_US
dc.subjectplasma treatmenten_US
dc.subjectelectric fielden_US
dc.titleEffect of size and plasma treatment and the application of Weibull distribution on the breakdown of PECVD SiNx MIM capacitorsen_US
dc.typeArticle; Proceedings Paperen_US
dc.identifier.doi10.1016/j.mee.2007.04.151en_US
dc.identifier.journalMICROELECTRONIC ENGINEERINGen_US
dc.citation.volume85en_US
dc.citation.issue1en_US
dc.citation.spage110en_US
dc.citation.epage114en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentInnovative Packaging Research Centerzh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.contributor.departmentInnovative Packaging Research Centeren_US
dc.identifier.wosnumberWOS:000253030100021-
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