Robust ultrathin oxynitride dielectrics by NH3 nitridation and N2O RTA treatment

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DC 欄位	值	語言
dc.contributor.author	Pan, TM	en_US
dc.contributor.author	Lei, TF	en_US
dc.contributor.author	Chao, TS	en_US
dc.date.accessioned	2014-12-08T15:45:01Z	-
dc.date.available	2014-12-08T15:45:01Z	-
dc.date.issued	2000-08-01	en_US
dc.identifier.issn	0741-3106	en_US
dc.identifier.uri	http://dx.doi.org/10.1109/55.852956	en_US
dc.identifier.uri	http://hdl.handle.net/11536/30377	-
dc.description.abstract	In this paper, a method to grow robust ultrathin (E-OT = 28 Angstrom) oxynitride film with effective dielectric constant of 5.7 is proposed, Samples, nitridized by NH3 with additional N2O annealing, show excellent electrical properties in terms of very low bulk trap density, low trap generation rate, and high endurance in stressing. This novel dielectric appears to be very promising for future ULSI devices.	en_US
dc.language.iso	en_US	en_US
dc.title	Robust ultrathin oxynitride dielectrics by NH3 nitridation and N2O RTA treatment	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1109/55.852956	en_US
dc.identifier.journal	IEEE ELECTRON DEVICE LETTERS	en_US
dc.citation.volume	21	en_US
dc.citation.issue	8	en_US
dc.citation.spage	378	en_US
dc.citation.epage	380	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:000088465000003	-
dc.citation.woscount	14	-
顯示於類別：	期刊論文

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