標題: High-peak-power diode-pumped actively Q-switched Nd : YAG intracavity Raman laser with an undoped YVO4 crystal - art. no. 68712J
作者: Su, K. W.
Chang, Y. T.
Chen, Y. F.
電子物理學系
Department of Electrophysics
關鍵字: Raman laser;diode-pumped laser;actively Q-switched
公開日期: 2008
摘要: The efficient stimulated Raman scattering conversion in a diode-pumped actively Q-switched Nd:YAG laser was achieved with an undoped YVO4 crystal as a Raman shifter. With an incident pump power of 16.2 W, 1176-nm first Stokes average output power of 2.97 W was generated at a pulse repetition rate of 50 kHz. The maximum pulse energy is higher than 83 mu J at both 20 kHz and 30 kHz. With mode-locked modulation, the effective pulse width far above threshold is usually below 5 ns. With an incident pump power of 7.62 W, the peak-power of 43.5 kW was demonstrated at 20 kHz.
URI: http://hdl.handle.net/11536/30409
http://dx.doi.org/10.1117/12.762821
ISBN: 978-0-8194-7046-1
ISSN: 0277-786X
DOI: 10.1117/12.762821
期刊: SOLID STATE LASERS XVII: TECHNOLOGY AND DEVICES
Volume: 6871
起始頁: J8712
結束頁: J8712
顯示於類別:會議論文


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