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dc.contributor.authorYin, CPen_US
dc.contributor.authorHsiao, CCen_US
dc.contributor.authorLin, TFen_US
dc.date.accessioned2014-12-08T15:45:06Z-
dc.date.available2014-12-08T15:45:06Z-
dc.date.issued2000-07-01en_US
dc.identifier.issn0022-0248en_US
dc.identifier.urihttp://dx.doi.org/10.1016/S0022-0248(00)00450-4en_US
dc.identifier.urihttp://hdl.handle.net/11536/30421-
dc.description.abstractAn experimental lamp heated, rapid thermal processor (RTP) for an 8-in single silicon wafer was designed and established to investigate the thermal and flow characteristics in the processing chamber by transient temperature measurement and flow visualization. Experiments were carried out to explore the effects of placing a highly conducting copper plate right below the wafer on the uniformity of the wafer temperature and effects of the showerhead on the resulting flow distribution in the processing chamber. The measured data indicated that adding the copper plate can effectively reduce the nonuniformity of the wafer temperature. Besides, using a showerhead with finer holes in it results in a better flow distribution in the processor. (C) 2000 Elsevier Science B.V. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectRTP processoren_US
dc.subjecttemperature uniformityen_US
dc.subjectflowen_US
dc.subjectconvectionen_US
dc.titleImprovement in wafer temperature uniformity and flow pattern in a lamp heated rapid thermal processoren_US
dc.typeArticleen_US
dc.identifier.doi10.1016/S0022-0248(00)00450-4en_US
dc.identifier.journalJOURNAL OF CRYSTAL GROWTHen_US
dc.citation.volume217en_US
dc.citation.issue1-2en_US
dc.citation.spage201en_US
dc.citation.epage210en_US
dc.contributor.department機械工程學系zh_TW
dc.contributor.departmentDepartment of Mechanical Engineeringen_US
dc.identifier.wosnumberWOS:000088340400024-
dc.citation.woscount4-
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