標題: Electrical characteristics of high quality La2O3 gate dielectric with equivalent oxide thickness of 5 angstrom
作者: Wu, YH
Yang, MY
Chin, A
Chen, WJ
Kwei, CM
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: high K dielectric;leakage current;reliability
公開日期: 1-Jul-2000
摘要: Electrical and reliability properties of ultrathin La2O3 gate dielectric have been investigated. The measured capacitance of 33 Angstrom La2O3 gate dielectric is 7.2 mu F/cm(2) that gives an effective K value of 27 and an equivalent oxide thickness of 4.8 Angstrom. Good dielectric integrity is evidence from the low leakage current density of 0.06 A/cm(2) at -1 V, high effective breakdown field of 13.5 MV/cm, low interface-trap density of 3 x 10(10) eV-1/cm(2), and excellent reliability with more than 10 years lifetime even at 2 V bias. In addition to high K, these dielectric properties are very close to conventional thermal SiO2.
URI: http://dx.doi.org/10.1109/55.847374
http://hdl.handle.net/11536/30423
ISSN: 0741-3106
DOI: 10.1109/55.847374
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 21
Issue: 7
起始頁: 341
結束頁: 343
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