標題: High-quality thermal oxide grown on high-temperature-formed SiGe
作者: Wu, YH
Chen, SB
Chin, A
Chen, WJ
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-五月-2000
摘要: We have developed a high-quality gate oxide on Si0.6Ge0.4 with a 30 Angstrom Si top layer. The good oxide integrity comparable to conventional thermal oxide is demonstrated by the low interface trap density of 6.2 X 10(10) eV(-1) cm(-2), low bride charge of 5.8 X 10(10) cm(-2), small leakage current at 3.3 V of 4.2 x 10(-8) A/cm(2), high breakdown field of 13.8 MV/cm, good charge-to-breakdown of 5.2 C/cm(2), and small stress-induced leakage current. This good oxide integrity is directly related to our previously developed SiGe formed by solid phase epitaxy at high temperatures that is stable during thermal oxidation. This simple process is fully compatible with existing very large scale integration technology. (C) 2000 The Electrochemical Society. S0013-4651(99)10-038-7. All rights reserved.
URI: http://dx.doi.org/10.1149/1.1393466
http://hdl.handle.net/11536/30550
ISSN: 0013-4651
DOI: 10.1149/1.1393466
期刊: JOURNAL OF THE ELECTROCHEMICAL SOCIETY
Volume: 147
Issue: 5
起始頁: 1962
結束頁: 1964
顯示於類別:期刊論文


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