標題: INTERFACIAL REACTIONS OF TITANIUM THIN-FILMS ON ION-IMPLANTED (001) SI
作者: LIAUH, HR
CHEN, MC
CHEN, JF
CHEN, LJ
LUR, W
CHU, CH
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-Apr-1993
摘要: An investigation on the influences of doping impurities on the formation of titanium silicide has been carried out. The formation of polycrystalline silicide was observed to be retarded by the presence of As in Ti/As+-Si samples compared with those in Ti/BF2+-Si samples. Superior thermal stability of TiSi2 was found to occur in BF2+ implanted samples than that in blank and As+ implanted samples. The resistance to island formation in BF2+ implanted samples is attributed to the retardation of grain growth by the segregation of fluorine atoms at the grain boundaries.
URI: http://hdl.handle.net/11536/3055
ISSN: 0168-583X
期刊: NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
Volume: 74
Issue: 1-2
起始頁: 134
結束頁: 137
Appears in Collections:Conferences Paper