Low contact resistance of poly-plug structure by in-situ HF-vapour cleaning

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DC Field	Value	Language
dc.contributor.author	Chen, JH	en_US
dc.contributor.author	Lei, TF	en_US
dc.contributor.author	Chao, TS	en_US
dc.contributor.author	Su, TP	en_US
dc.contributor.author	Huang, SJ	en_US
dc.contributor.author	Tuan, A	en_US
dc.contributor.author	Chen, SK	en_US
dc.date.accessioned	2014-12-08T15:45:23Z	-
dc.date.available	2014-12-08T15:45:23Z	-
dc.date.issued	2000-04-13	en_US
dc.identifier.issn	0013-5194	en_US
dc.identifier.uri	http://dx.doi.org/10.1049/el:20000580	en_US
dc.identifier.uri	http://hdl.handle.net/11536/30583	-
dc.description.abstract	A low contact-resistance poly-plug structure realised by in-situ HF-vapour cleaning in a clustered tool is described. The native oxide in the contact area can be efficiently removed by the combination of an HF-dipping and in-situ HF-vapour cleaning process, resulting in a low specific contact resistance.	en_US
dc.language.iso	en_US	en_US
dc.title	Low contact resistance of poly-plug structure by in-situ HF-vapour cleaning	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1049/el:20000580	en_US
dc.identifier.journal	ELECTRONICS LETTERS	en_US
dc.citation.volume	36	en_US
dc.citation.issue	8	en_US
dc.citation.spage	756	en_US
dc.citation.epage	757	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:000086845500042	-
dc.citation.woscount	3	-
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