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dc.contributor.authorChen, KHen_US
dc.contributor.authorWu, JJen_US
dc.contributor.authorChen, LCen_US
dc.contributor.authorWen, CYen_US
dc.contributor.authorKichambare, PDen_US
dc.contributor.authorTarntair, FGen_US
dc.contributor.authorKuo, PFen_US
dc.contributor.authorChang, SWen_US
dc.contributor.authorChen, YFen_US
dc.date.accessioned2014-12-08T15:45:24Z-
dc.date.available2014-12-08T15:45:24Z-
dc.date.issued2000-04-01en_US
dc.identifier.issn0925-9635en_US
dc.identifier.urihttp://dx.doi.org/10.1016/S0925-9635(99)00352-0en_US
dc.identifier.urihttp://hdl.handle.net/11536/30588-
dc.description.abstractComparative studies on field emission properties of various carbon-related materials including diamond, amorphous carbon, SiCN films, SiCN nanorods, and carbon nanotubes are presented. While diamond is well known for its potential use in cold cathodes, the emission current of a hydrogen-treated diamond film is relatively small compared to that of amorphous carbon or diamond-like-carbon film. Meanwhile, carbon nanotubes have demonstrated large emission currents at much lower threshold voltages, showing their potential for applications. However, the emission from carbon nanotubes is subjected to significant decay under long-term operation. The emission current and long-term stability can be improved using a new SiCN compound with nanorod morphology. The effective barrier height and the held enhancement factor derived from the Fowler-Nordheim equation are discussed in this paper. (C) 2000 Elsevier Science S.A. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectamorphous carbonen_US
dc.subjectcarbon-based materialsen_US
dc.subjectcarbon nanotubesen_US
dc.subjectdiamonden_US
dc.subjectfield emission propertiesen_US
dc.subjectSiCN filmsen_US
dc.subjectSiCN nanorodsen_US
dc.titleComparative studies on field emission properties of carbon-based materialsen_US
dc.typeArticle; Proceedings Paperen_US
dc.identifier.doi10.1016/S0925-9635(99)00352-0en_US
dc.identifier.journalDIAMOND AND RELATED MATERIALSen_US
dc.citation.volume9en_US
dc.citation.issue3-6en_US
dc.citation.spage1249en_US
dc.citation.epage1256en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000087382400205-
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