Title: Monte Carlo sphere model for effective oxide thinning induced extrinsic breakdown
Authors: Huang, HT
Chen, MJ
Chen, JH
Su, CW
Hou, CS
Liang, MS
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
Keywords: silicon;CMOS;oxide breakdown;Monte Carte;percolation;extrinsic;effective oxide thinning
Issue Date: 1-Apr-2000
Abstract: The Monte Carlo sphere model is extended to deal with the extrinsic time-dependent-dielectric-breakdown (TCDB) by incorporating the well-known "effective oxide thinning" concept. Percolation simulation, based on this model for the first time, evidences that the process defects induced extrinsic TDDB is also statistical in nature as is the intrinsic one, and is characterized by a probability function defining local oxide thinning. The experimental bimodal or even multimodal characteristics can be reproduced accordingly. Furthermore, the simulation results in the extrinsic regime are found to be sample-size (i.e., the total number of samples that span the breakdown statistics) dependent, suggesting that care should be taken when evaluating the extrinsic TDDB data in a real manufacturing process.
URI: http://dx.doi.org/10.1143/JJAP.39.2026
http://hdl.handle.net/11536/30602
ISSN: 0021-4922
DOI: 10.1143/JJAP.39.2026
Journal: JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
Volume: 39
Issue: 4B
Begin Page: 2026
End Page: 2029
Appears in Collections:Conferences Paper


Files in This Item:

  1. 000088909300015.pdf

If it is a zip file, please download the file and unzip it, then open index.html in a browser to view the full text content.