標題: A new observation of band-to-band tunneling induced hot-carrier stress using charge-pumping technique
作者: Chu, YL
Wu, CY
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: BTBT;charge-pumping technique;interface-states;MOSFET;oxide-trapped charges
公開日期: 1-三月-2000
摘要: The lateral distributions of interface-states (N-it) and oxide-trapped charges (Q(ox)) generated by band-to-band tunneling (BTBT) induced hot-carrier stress are analyzed by the new charge-pumping method. It is shown that the interface-states and oxide-trapped charges should be originated from different types of carriers due to the separation of the locations of their peak values. The further evidence of the measured distribution of the interface-states in the band-gap shows that the carriers travelled toward the gate edge would be the dominant carrier for the generation of interface-states while the carriers travelled away from the gate edge will generate oxide-trapped charges through the help of the vertical electric field. These results should be very useful for the reliability analysis of flash memories.
URI: http://dx.doi.org/10.1109/55.823576
http://hdl.handle.net/11536/30685
ISSN: 0741-3106
DOI: 10.1109/55.823576
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 21
Issue: 3
起始頁: 123
結束頁: 126
顯示於類別:期刊論文


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