A new observation of band-to-band tunneling induced hot-carrier stress using charge-pumping technique

Abstract

The lateral distributions of interface-states (N-it) and oxide-trapped charges (Q(ox)) generated by band-to-band tunneling (BTBT) induced hot-carrier stress are analyzed by the new charge-pumping method. It is shown that the interface-states and oxide-trapped charges should be originated from different types of carriers due to the separation of the locations of their peak values. The further evidence of the measured distribution of the interface-states in the band-gap shows that the carriers travelled toward the gate edge would be the dominant carrier for the generation of interface-states while the carriers travelled away from the gate edge will generate oxide-trapped charges through the help of the vertical electric field. These results should be very useful for the reliability analysis of flash memories.