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dc.contributor.authorWong, SCen_US
dc.contributor.authorLee, GYen_US
dc.contributor.authorMa, DJen_US
dc.date.accessioned2014-12-08T15:45:44Z-
dc.date.available2014-12-08T15:45:44Z-
dc.date.issued2000-02-01en_US
dc.identifier.issn0894-6507en_US
dc.identifier.urihttp://dx.doi.org/10.1109/66.827350en_US
dc.identifier.urihttp://hdl.handle.net/11536/30770-
dc.description.abstractIncreasing complexity in VLSI circuits makes metal interconnection a significant factor affecting circuit performance. In this paper, we first develop new closed-form capacitance formulas for two major structures in very large scale integration (VLSI), namely, 1) parallel lines on a plane and 2) wires between two planes, by considering the electrical flux to adjacent wires and to ground separately. We then further derive closed-form solutions for the delay and crosstalk noise. The capacitance models agree well with numerical solutions of three-dimensional (3-D) Poisson's equation as well as measurement data. The delay and crosstalk models agree well with SPICE simulations.en_US
dc.language.isoen_USen_US
dc.subjectclosed-form modelsen_US
dc.subjectdelay and crosstalken_US
dc.subjectinterconnect capacitanceen_US
dc.subjectsimulationsen_US
dc.titleModeling of interconnect capacitance, delay, and crosstalk in VLSIen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/66.827350en_US
dc.identifier.journalIEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURINGen_US
dc.citation.volume13en_US
dc.citation.issue1en_US
dc.citation.spage108en_US
dc.citation.epage111en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000086167700011-
dc.citation.woscount84-
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