標題: Effects of polysilicon gate doping concentration on plasma charging damage in ultrathin gate oxides
作者: Chen, CC
Lin, HC
Chang, CY
Huang, TY
Chien, CH
Liang, MS
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-二月-2000
摘要: Effects of poly-gate doping concentration on plasma charging damage in ultrathin gate oxides were investigated. While the charge-to-breakdown (Q(bd)) value under gate injection stress polarity (-V-g) is independent of the doping concentration, eb, under substrate injection stress polarity (+V-g) shows a noticeable improvement with increasing doping concentration. However, our results show that plasma-induced oxide degradation is actually aggravated with increasing poly-gate doping concentration. These seemingly inconsistent observations can be explained by the lowering of plasma charging potential in the case of insufficient poly-gate doping. (C) 1999 The Electrochemical Society. S1099-0062(99)10-079-8. All rights reserved.
URI: http://dx.doi.org/10.1149/1.1390971
http://hdl.handle.net/11536/30790
ISSN: 1099-0062
DOI: 10.1149/1.1390971
期刊: ELECTROCHEMICAL AND SOLID STATE LETTERS
Volume: 3
Issue: 2
起始頁: 103
結束頁: 105
顯示於類別:期刊論文