Nanometer-scale conversion of Si3N4 to SiOx

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DC Field	Value	Language
dc.contributor.author	Chien, FSS	en_US
dc.contributor.author	Chang, JW	en_US
dc.contributor.author	Lin, SW	en_US
dc.contributor.author	Chou, YC	en_US
dc.contributor.author	Chen, TT	en_US
dc.contributor.author	Gwo, S	en_US
dc.contributor.author	Chao, TS	en_US
dc.contributor.author	Hsieh, WF	en_US
dc.date.accessioned	2014-12-08T15:45:46Z	-
dc.date.available	2014-12-08T15:45:46Z	-
dc.date.issued	2000-01-17	en_US
dc.identifier.issn	0003-6951	en_US
dc.identifier.uri	http://hdl.handle.net/11536/30799	-
dc.description.abstract	It has been found that atomic force microscope (AFM) induced local oxidation is an effective way for converting thin (< 5 nm) Si3N4 films to SiOx. The threshold voltage for the 4.2 nm film is as low as 5 V and the initial growth rate is on the order of 10(3) nm/s at 10 V. Micro-Auger analysis of the selectively oxidized region revealed the formation of SiOx. Due to the large chemical selectivity in various etchants and great thermal oxidation rate difference between Si3N4, SiO2, and Si, AFM patterning of Si3N4 films can be a promising method for fabricating nanoscale structures. (C) 2000 American Institute of Physics. [S0003-6951(00)03003-5].	en_US
dc.language.iso	en_US	en_US
dc.title	Nanometer-scale conversion of Si3N4 to SiOx	en_US
dc.type	Article	en_US
dc.identifier.journal	APPLIED PHYSICS LETTERS	en_US
dc.citation.volume	76	en_US
dc.citation.issue	3	en_US
dc.citation.spage	360	en_US
dc.citation.epage	362	en_US
dc.contributor.department	光電工程學系	zh_TW
dc.contributor.department	Department of Photonics	en_US
dc.identifier.wosnumber	WOS:000084675100037	-
dc.citation.woscount	70	-
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