Passivation of copper films with magnesium doping using recoil ion implantation

doi:10.1016/S0040-6090(99)00660-4

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DC 欄位	值	語言
dc.contributor.author	Wu, ZC	en_US
dc.contributor.author	Liu, YL	en_US
dc.contributor.author	Chen, MC	en_US
dc.date.accessioned	2014-12-08T15:45:47Z	-
dc.date.available	2014-12-08T15:45:47Z	-
dc.date.issued	2000-01-10	en_US
dc.identifier.issn	0040-6090	en_US
dc.identifier.uri	http://dx.doi.org/10.1016/S0040-6090(99)00660-4	en_US
dc.identifier.uri	http://hdl.handle.net/11536/30807	-
dc.description.abstract	This work investigates the effects of Ar+ ion implantation through a multilayer structure of SiO2(100 nm)/Mg(20 nm)/Cu/SiO2/Si on the oxidation resistance of Cu films. Experimental results indicate that implantation at 130 keV to a dose of 5 X 10(15) cm(-2) significantly enhances the oxidation resistance at temperatures up to 375 degrees C. At this energy, a small number of Mg atoms are knocked out, leading to formation of an impervious MgO barrier layer on the Cu surface, which effectively suppresses the oxidizing diffusion paths. (C) 2000 Elsevier Science S.A. All rights reserved.	en_US
dc.language.iso	en_US	en_US
dc.subject	copper	en_US
dc.subject	ion implantation	en_US
dc.subject	magnesium	en_US
dc.subject	oxidation	en_US
dc.title	Passivation of copper films with magnesium doping using recoil ion implantation	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1016/S0040-6090(99)00660-4	en_US
dc.identifier.journal	THIN SOLID FILMS	en_US
dc.citation.volume	358	en_US
dc.citation.issue	1-2	en_US
dc.citation.spage	180	en_US
dc.citation.epage	186	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:000084649700027	-
dc.citation.woscount	9	-
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