標題: ENHANCED O2 PLASMA STRIPPING OF P+ AND SI+ IMPLANTED NEGATIVE RESIST BY H2 PLASMA PRETREATMENT
作者: LOONG, WA
YEN, MS
WANG, FC
HSU, BY
LIU, YL
交大名義發表
應用化學系
National Chiao Tung University
Department of Applied Chemistry
公開日期: 1-Apr-1993
摘要: Hydrogen plasma pretreatments (100 W, 20 sccm, 0.2 torr, 40 approximately 115-degrees-C, 10 approximately 30 min) of Si+, P+, B+ and As+ implanted (100 keV, 1x10(15) ion/cm2) Hunt HR-200 negative resists to the oxygen plasma stripping (100 W, 40 sccm, 0.45 torr, 40 approximately 115-degrees-C) were studied in this report. The results showed that only the resistance to oxygen plasma stripping of Si+ and P+ implanted HR-200 were greatly reduced at the conditions in this study. The activation energies Eact of Si+ and P+ implanted HR-200 by oxygen plasma stripping can be both brought down from approximately 1.3 to approximately 0.85 kcal/mole by hydrogen plasma pretreatment. The FTIR, SEM and ESCA analyses indicated the decreasing of carbonization layers by hydrogen plasma pretreatments.
URI: http://hdl.handle.net/11536/3081
ISSN: 0167-9317
期刊: MICROELECTRONIC ENGINEERING
Volume: 21
Issue: 1-4
起始頁: 259
結束頁: 262
Appears in Collections:Conferences Paper