標題: | Annealing effects on the interfacial reactions of Ni on Si0.76Ge0.24 and Si1-x-yGexCy |
作者: | Luo, JS Lin, WT Chang, CY Shih, PS Pan, FM 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
公開日期: | 1-Jan-2000 |
摘要: | Interfacial reactions of Ni/Si0.76Ge0.24 and Ni/Si1-x-yGexCy by vacuum annealing and pulsed KrF laser annealing were studied. Upon annealing at a temperature of 200-600 degrees C Ge segregation occurred with the extent becoming more severe at higher temperatures. The temperatures at which phase transformation and the agglomeration structure occurred were higher for Ni/Si1-x-yGexCy than for Ni/Si0.76Ge0.24. Upon pulsed KrF laser annealing the agglomeration structure was considerably improved, however, the retardation of phase transformation in the Ni/Si1-x-yGexCy system still occurred. C accumulation around the original amorphous/crystal interface formed by Cf implantation played a significant effect on delaying the phase transformation. For the Ni/Si0.76Ge0.24 and Ni/Si1-x-yGexCy samples annealed at 0.2 J/cm(2) for 20 and 30 pulses, respectively, smooth Ni(Si0.76Ge0.24)(2) and Ni(Si1-x-yGexCy)(2) films could be grown, meanwhile Ge segregation and strain relaxation of the unreacted Si0.76Ge0.23 films were effectively suppressed. (C) 2000 American Vacuum Society. [S0734-2101(00)04301-3]. |
URI: | http://dx.doi.org/10.1116/1.582131 http://hdl.handle.net/11536/30847 |
ISSN: | 0734-2101 |
DOI: | 10.1116/1.582131 |
期刊: | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS |
Volume: | 18 |
Issue: | 1 |
起始頁: | 143 |
結束頁: | 148 |
Appears in Collections: | Articles |
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