Electrical characteristics of polyoxide prepared by N-2 preannealing

doi:10.1149/1.1390951

Full metadata record

DC Field	Value	Language
dc.contributor.author	Chang, KM	en_US
dc.contributor.author	Lee, TC	en_US
dc.contributor.author	Wang, JY	en_US
dc.date.accessioned	2014-12-08T15:45:55Z	-
dc.date.available	2014-12-08T15:45:55Z	-
dc.date.issued	2000-01-01	en_US
dc.identifier.issn	1099-0062	en_US
dc.identifier.uri	http://dx.doi.org/10.1149/1.1390951	en_US
dc.identifier.uri	http://hdl.handle.net/11536/30879	-
dc.description.abstract	This paper reports on the electrical characteristics of polyoxide with preoxidation N-2 annealing in a rapid thermal annealing system. By treating the polysilicon film before oxidation, the obtained polyoxide has the desired relative characteristics, i.e., a higher breakdown electric field, a smaller voltage shift, and larger charge-to-breakdown. This improvement is due to the reduction of defects, such as microtwins, inside the grain. (C) 1999 The Electrochemical Society. S1099-0062(99)08-054-2. All rights reserved.	en_US
dc.language.iso	en_US	en_US
dc.title	Electrical characteristics of polyoxide prepared by N-2 preannealing	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1149/1.1390951	en_US
dc.identifier.journal	ELECTROCHEMICAL AND SOLID STATE LETTERS	en_US
dc.citation.volume	3	en_US
dc.citation.issue	1	en_US
dc.citation.spage	39	en_US
dc.citation.epage	40	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:000083683600012	-
dc.citation.woscount	0	-
Appears in Collections:	Articles