標題: | Electrical characteristics of polyoxide prepared by N-2 preannealing |
作者: | Chang, KM Lee, TC Wang, JY 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
公開日期: | 1-一月-2000 |
摘要: | This paper reports on the electrical characteristics of polyoxide with preoxidation N-2 annealing in a rapid thermal annealing system. By treating the polysilicon film before oxidation, the obtained polyoxide has the desired relative characteristics, i.e., a higher breakdown electric field, a smaller voltage shift, and larger charge-to-breakdown. This improvement is due to the reduction of defects, such as microtwins, inside the grain. (C) 1999 The Electrochemical Society. S1099-0062(99)08-054-2. All rights reserved. |
URI: | http://dx.doi.org/10.1149/1.1390951 http://hdl.handle.net/11536/30879 |
ISSN: | 1099-0062 |
DOI: | 10.1149/1.1390951 |
期刊: | ELECTROCHEMICAL AND SOLID STATE LETTERS |
Volume: | 3 |
Issue: | 1 |
起始頁: | 39 |
結束頁: | 40 |
顯示於類別: | 期刊論文 |