Ultrafast carrier-carrier scattering in AlxGa1-xAs/GaAs quantum wells

doi:10.1016/S0921-4526(99)00386-5

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Sun, KW	en_US
dc.contributor.author	Song, TS	en_US
dc.contributor.author	Sun, CK	en_US
dc.contributor.author	Wang, JC	en_US
dc.contributor.author	Wang, SY	en_US
dc.contributor.author	Lee, CP	en_US
dc.date.accessioned	2014-12-08T15:45:58Z	-
dc.date.available	2014-12-08T15:45:58Z	-
dc.date.issued	1999-12-01	en_US
dc.identifier.issn	0921-4526	en_US
dc.identifier.uri	http://dx.doi.org/10.1016/S0921-4526(99)00386-5	en_US
dc.identifier.uri	http://hdl.handle.net/11536/30922	-
dc.description.abstract	We present new time-resolved measurements that demonstrate the effect of injected carrier densities on carrier-carrier scattering rates of a highly nonequilibrium carrier distribution in the p-doped Al0.32Ga0.68As/GaAs quantum wells. The initially photoexcited nonthermal carrier distribution is quickly broadened due to rapid increase of the inelastic carrier-carrier scattering as the injected carrier densities increased toward 10(11) cm(-2). (C) 1999 Elsevier Science B.V. All rights reserved.	en_US
dc.language.iso	en_US	en_US
dc.subject	carrier-carrier scattering	en_US
dc.subject	LO phonon emission	en_US
dc.subject	nonthermal carrier distributions	en_US
dc.title	Ultrafast carrier-carrier scattering in AlxGa1-xAs/GaAs quantum wells	en_US
dc.type	Article; Proceedings Paper	en_US
dc.identifier.doi	10.1016/S0921-4526(99)00386-5	en_US
dc.identifier.journal	PHYSICA B	en_US
dc.citation.volume	272	en_US
dc.citation.issue	1-4	en_US
dc.citation.spage	387	en_US
dc.citation.epage	390	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:000084375600109	-
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