Negative differential resistance in InGaAs/AlAsSb/InGaAs single-barrier heterostructure

Title:	Negative differential resistance in InGaAs/AlAsSb/InGaAs single-barrier heterostructure
Authors:	Chen, WK Cheng, RH Ou, J 交大名義發表電子物理學系 National Chiao Tung University Department of Electrophysics
Issue Date:	8-Sep-1997
Abstract:	We have observed negative differential resistance in InP lattice-matched InGaAs/AlAsSb/InGaAs single-barrier tunneling heterostructure. With a 10-nm-thick barrier, the diode exhibits a peak-to-valley current ratio of 4.2 (1.2) and peak current density of 54 (158) A/cm(2) at 100 K(300 K). (C) 1997 American Institute of Physics.
URI:	http://hdl.handle.net/11536/310
ISSN:	0003-6951
Journal:	APPLIED PHYSICS LETTERS
Volume:	71
Issue:	10
Begin Page:	1373
End Page:	1375
Appears in Collections:	Articles