Negative differential resistance in InGaAs/AlAsSb/InGaAs single-barrier heterostructure

Abstract

We have observed negative differential resistance in InP lattice-matched InGaAs/AlAsSb/InGaAs single-barrier tunneling heterostructure. With a 10-nm-thick barrier, the diode exhibits a peak-to-valley current ratio of 4.2 (1.2) and peak current density of 54 (158) A/cm(2) at 100 K(300 K). (C) 1997 American Institute of Physics.