Improvement of junction leakage of nickel silicided junction by a Ti-capping layer

doi:10.1109/55.798047

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DC 欄位	值	語言
dc.contributor.author	Hou, TH	en_US
dc.contributor.author	Lei, TF	en_US
dc.contributor.author	Chao, TS	en_US
dc.date.accessioned	2014-12-08T15:46:06Z	-
dc.date.available	2014-12-08T15:46:06Z	-
dc.date.issued	1999-11-01	en_US
dc.identifier.issn	0741-3106	en_US
dc.identifier.uri	http://dx.doi.org/10.1109/55.798047	en_US
dc.identifier.uri	http://hdl.handle.net/11536/31000	-
dc.description.abstract	A novel NiSi process with a thin Ti-cap layer is proposed, for the first time, to improve the leakage problem of Ni-silicided junction, The Ti-cap samples exhibit a very low leakage current density about 1 x 10 A/cm(2) after 600 degrees C annealing, which is one order of magnitude reduction comparing with uncapped samples. From Anger analyzes, it is found that this significant improvement results from suppression of the oxidation of the Ni-silicide during the thermal annealing process.	en_US
dc.language.iso	en_US	en_US
dc.subject	junction leakage	en_US
dc.subject	nickel silicide	en_US
dc.subject	titanium	en_US
dc.title	Improvement of junction leakage of nickel silicided junction by a Ti-capping layer	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1109/55.798047	en_US
dc.identifier.journal	IEEE ELECTRON DEVICE LETTERS	en_US
dc.citation.volume	20	en_US
dc.citation.issue	11	en_US
dc.citation.spage	572	en_US
dc.citation.epage	573	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:000083431700010	-
dc.citation.woscount	44	-
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