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dc.contributor.authorChien, FSSen_US
dc.contributor.authorWu, CLen_US
dc.contributor.authorChou, YCen_US
dc.contributor.authorChen, TTen_US
dc.contributor.authorGwo, Sen_US
dc.contributor.authorHsieh, WFen_US
dc.date.accessioned2014-12-08T15:46:08Z-
dc.date.available2014-12-08T15:46:08Z-
dc.date.issued1999-10-18en_US
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://hdl.handle.net/11536/31027-
dc.description.abstractWe have demonstrated that silicon nanostructures with high aspect ratios, having similar to 400 nm structural height and similar to 55 nm lateral dimension, may be fabricated by scanning probe lithography and aqueous KOH orientation-dependent etching on the H-passivated (110) Si wafer. The high spatial resolution of fabricated features is achieved by using the atomic force microscope based nano-oxidation process in ambient. Due to the large (110)/(111) anisotropic ratio of etch rate and the large Si/SiO2 etch selectivity at a relatively low etching temperature and an optimal KOH concentration, high-aspect-ratio gratings with (111)-oriented structural sidewalls as well as hexagonal etch pit structures determined by the terminal etch geometry can be obtained. (C) 1999 American Institute of Physics. [S0003-6951(99)03242-8].en_US
dc.language.isoen_USen_US
dc.titleNanomachining of (110)-oriented silicon by scanning probe lithography and anisotropic wet etchingen_US
dc.typeArticleen_US
dc.identifier.journalAPPLIED PHYSICS LETTERSen_US
dc.citation.volume75en_US
dc.citation.issue16en_US
dc.citation.spage2429en_US
dc.citation.epage2431en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000083111100029-
dc.citation.woscount80-
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