H-2/O-2 PLASMA ON POLYSILICON THIN-FILM TRANSISTOR

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DC Field	Value	Language
dc.contributor.author	CHERN, HN	en_US
dc.contributor.author	LEE, CL	en_US
dc.contributor.author	LEI, TF	en_US
dc.date.accessioned	2014-12-08T15:04:37Z	-
dc.date.available	2014-12-08T15:04:37Z	-
dc.date.issued	1993-03-01	en_US
dc.identifier.issn	0741-3106	en_US
dc.identifier.uri	http://dx.doi.org/10.1109/55.215129	en_US
dc.identifier.uri	http://hdl.handle.net/11536/3103	-
dc.description.abstract	This letter reports that the H-2 plasma followed by the O2 plasma is more effective to passivate grain boundary states in the polysilicon thin film. Polysilicon thin-film transistors (TFT's) made after applying H-2/O2 Plasma treatment can exhibit a turn-on threshold voltage of -0.1 V, a subthreshold swing of 0.154 V/decade, an ON/OFF current ratio I(on)/I(off) over 1 x 10(8), and an electron mobility of 40.2 cm2/V . S.	en_US
dc.language.iso	en_US	en_US
dc.title	H-2/O-2 PLASMA ON POLYSILICON THIN-FILM TRANSISTOR	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1109/55.215129	en_US
dc.identifier.journal	IEEE ELECTRON DEVICE LETTERS	en_US
dc.citation.volume	14	en_US
dc.citation.issue	3	en_US
dc.citation.spage	115	en_US
dc.citation.epage	117	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:A1993KN76400007	-
dc.citation.woscount	21	-
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