完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Cheng, HC | en_US |
dc.contributor.author | Lai, WK | en_US |
dc.contributor.author | Hwang, CC | en_US |
dc.contributor.author | Juang, MH | en_US |
dc.contributor.author | Chu, SC | en_US |
dc.contributor.author | Liu, TF | en_US |
dc.date.accessioned | 2014-12-08T15:46:12Z | - |
dc.date.available | 2014-12-08T15:46:12Z | - |
dc.date.issued | 1999-10-01 | en_US |
dc.identifier.issn | 0741-3106 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1109/55.791934 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/31075 | - |
dc.description.abstract | Nitridation of the stacked poly-Si gates by the inductively coupled N-2 plasma (ICNP) treatments has been shown to suppress the boron penetration and improve the gate oxide integrity. The ICNP treatments on the stacked poly-Si layers would create the nitrogen-rich layers not only between the stacked poly-Si layers but also in the gate oxide after post implant anneal, thus resulting in effective retardation of boron diffusion. In addition, the position of ICNP treatment closer to gate oxides leads to higher nitrogen peaks in the gate oxide region, resulting in further suppression of boron penetration and improvement of gate oxide reliability. | en_US |
dc.language.iso | en_US | en_US |
dc.title | Suppression of boron penetration for p(+) stacked poly-Si gates by using inductively coupled N-2 plasma treatment | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1109/55.791934 | en_US |
dc.identifier.journal | IEEE ELECTRON DEVICE LETTERS | en_US |
dc.citation.volume | 20 | en_US |
dc.citation.issue | 10 | en_US |
dc.citation.spage | 535 | en_US |
dc.citation.epage | 537 | en_US |
dc.contributor.department | 材料科學與工程學系 | zh_TW |
dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
dc.contributor.department | Department of Materials Science and Engineering | en_US |
dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
dc.identifier.wosnumber | WOS:000082760800013 | - |
dc.citation.woscount | 3 | - |
顯示於類別: | 期刊論文 |