Suppression of boron penetration by using inductive-coupling-nitrogen-plasma in stacked amorphous/polysilicon gate structure

Abstract

A method is introduced for suppressing the penetration of boron for BF2+-implanted pMOS devices with a stacked amorphous/ poly-Si (SAP) gate structure. It is shown that after inductive-coupling-nitrogen-plasma (ICNP) treatment, boron diffusion through the thin gale oxide is largely suppressed. As shown from the charge-to-breakdown measurements, the ICNP process will improve the quality of pMOS devices, with Q(bd) three times higher than for the control samples.