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dc.contributor.authorWang, THen_US
dc.contributor.authorChiang, LPen_US
dc.contributor.authorZous, NKen_US
dc.contributor.authorHsu, CFen_US
dc.contributor.authorHuang, LYen_US
dc.contributor.authorChao, TSen_US
dc.date.accessioned2014-12-08T15:46:14Z-
dc.date.available2014-12-08T15:46:14Z-
dc.date.issued1999-09-01en_US
dc.identifier.issn0018-9383en_US
dc.identifier.urihttp://dx.doi.org/10.1109/16.784188en_US
dc.identifier.urihttp://hdl.handle.net/11536/31102-
dc.description.abstractThe mechanisms and characteristics of hot carrier stress-induced drain leakage current degradation in thin-oxide n-MOSFET's are investigated. Both interface trap and oxide charge effects are analyzed. Various drain leakage current components at zero V-gs such as drain-to-source subthreshold leakage, band-to-band tunneling current, and interface trap-induced leakage are taken into account, The trap-assisted drain leakage mechanisms include charge sequential tunneling current, thermionic-field emission current,:and Shockley-Read-Hall generation current. The dependence of drain leakage current on supply voltage, temperature, and oxide thickness is characterized. Our result shows that the trap-assisted leakage may become a dominant drain leakage mechanism as supply voltage is reduced. In addition, a strong oxide thickness dependence of drain leakage degradation is observed. In ultra-thin gate oxide (30 Angstrom) n-MOSFET's, drain leakage current degradation is attributed mostly to interface trap creation, while in thicker oxide (53 Angstrom) devices, the drain leakage current exhibits two-stage degradation, a power law degradation rate in the initial stage due to interface trap generation, followed by an accelerated degradation rate in the second stage caused by oxide charge creation.en_US
dc.language.isoen_USen_US
dc.subjectdrain leakage degradationen_US
dc.subjecthot carrieren_US
dc.subjectthin oxideen_US
dc.titleA comprehensive study of hot carrier stress-induced drain leakage current degradation in thin-oxide n-MOSFET'sen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/16.784188en_US
dc.identifier.journalIEEE TRANSACTIONS ON ELECTRON DEVICESen_US
dc.citation.volume46en_US
dc.citation.issue9en_US
dc.citation.spage1877en_US
dc.citation.epage1882en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000082242500010-
dc.citation.woscount26-
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