完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Wang, TH | en_US |
dc.contributor.author | Chiang, LP | en_US |
dc.contributor.author | Zous, NK | en_US |
dc.contributor.author | Hsu, CF | en_US |
dc.contributor.author | Huang, LY | en_US |
dc.contributor.author | Chao, TS | en_US |
dc.date.accessioned | 2014-12-08T15:46:14Z | - |
dc.date.available | 2014-12-08T15:46:14Z | - |
dc.date.issued | 1999-09-01 | en_US |
dc.identifier.issn | 0018-9383 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1109/16.784188 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/31102 | - |
dc.description.abstract | The mechanisms and characteristics of hot carrier stress-induced drain leakage current degradation in thin-oxide n-MOSFET's are investigated. Both interface trap and oxide charge effects are analyzed. Various drain leakage current components at zero V-gs such as drain-to-source subthreshold leakage, band-to-band tunneling current, and interface trap-induced leakage are taken into account, The trap-assisted drain leakage mechanisms include charge sequential tunneling current, thermionic-field emission current,:and Shockley-Read-Hall generation current. The dependence of drain leakage current on supply voltage, temperature, and oxide thickness is characterized. Our result shows that the trap-assisted leakage may become a dominant drain leakage mechanism as supply voltage is reduced. In addition, a strong oxide thickness dependence of drain leakage degradation is observed. In ultra-thin gate oxide (30 Angstrom) n-MOSFET's, drain leakage current degradation is attributed mostly to interface trap creation, while in thicker oxide (53 Angstrom) devices, the drain leakage current exhibits two-stage degradation, a power law degradation rate in the initial stage due to interface trap generation, followed by an accelerated degradation rate in the second stage caused by oxide charge creation. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | drain leakage degradation | en_US |
dc.subject | hot carrier | en_US |
dc.subject | thin oxide | en_US |
dc.title | A comprehensive study of hot carrier stress-induced drain leakage current degradation in thin-oxide n-MOSFET's | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1109/16.784188 | en_US |
dc.identifier.journal | IEEE TRANSACTIONS ON ELECTRON DEVICES | en_US |
dc.citation.volume | 46 | en_US |
dc.citation.issue | 9 | en_US |
dc.citation.spage | 1877 | en_US |
dc.citation.epage | 1882 | en_US |
dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
dc.identifier.wosnumber | WOS:000082242500010 | - |
dc.citation.woscount | 26 | - |
顯示於類別: | 期刊論文 |